ELECTRICAL CHARACTERIZATION OF COMPOUND SEMICONDUCTORS FOR DEVICE APPLICATIONS

Abstract

This research provides a thorough summary of the electrical characterization methods used in compound semiconductor research for a range of device applications. A variety of electrical and optoelectronic devices find compound semiconductors appealing due to their special qualities. Crucial material properties including carrier concentration, mobility, and trap densities can be determined by using critical characterization techniques like deep-level transient spectroscopy, capacitance-voltage profiling, and Hall effect measurements, as discussed in the abstract. Additionally, it discusses the importance of these characterizations methods for maximizing device reliability and performance, offering insightful information for next developments in compound semiconductor device technology. Semiconductor materials were described utilizing exceptionally constructed photoreflectance balance spectroscopy and photoconductivity spectroscopy arrangements. To make grid matched substrates for the development of Hg1-xCdxTe, which is utilized in infrared locators, the ternary Cd1-xZnxTe blend was investigated to oversee its organization. The composition of CdZnTe standards was ascertained using band gap energy estimates using photoreflectance spectroscopy, which can accurately estimate the energy levels in semiconductors.