ANNEALED TEMPERATURE SOL-GEL DEPOSITED P-CHANNEL TYPE CUXCR1-XO2- Δ THIN FILM TRANSISTORS
Abstract
Thin-film transistors (TFTs) were created in this study by integrating transparent p-type CuCr 1-xOy semiconductor thin films, which were created using spin coating. (x =0.0≤x≤0.4)) . For P-type thin-film transistors, which are essential parts of printed electronics, Cu-based films offer a low-cost and low-energy manufacturing method. CuCr 1-xO2 thin-film device performance was thoroughly examined, along with its structural and morphological elements and optical characteristics. When the annealing temperature (Ta) exceeded 750ͦ C, the phase transition from a combination of CuCr2O4 and CuO to pure CuCrO2 was achieved. The optimized Cucr1-xo2 TFT has a Resistivity Value about 0.021 Ω cm, an on/off current ratio of 107 and a hole mobility of 0.61 cm2V-1S-1 . The construction and operation of p-Type oxide TFTs are briefly summarized in this study, along with the challenges and advancements in oxide transistor and CMOS logic circuit development.
