ENHANCED STRUCTURE, COMPOSITION, AND PROPERTIES OF CUCR1-XO2 THINFILMS

Abstract

CuCr1-xO2 thin films was synthesized by a sol-gel technique. In this study structural, optical and
electrical properties of CuCr1-xO2 films (x = 0, 0.1, 0.15, 0.2, 0.3) which exhibited p-type
properties, were investigated. Using Combustion chemistry, films are solution processed at150o c
which is lower than most recent efforts. Smooth and homogeneous thin films are obtained at the
pretreated temperature at 450oc. CuCr1-xO2 thin films have been annealed at different temperatures
(from 600 to 9000c). The films were characterized by XRD, FE-SEM, FTIR and Hall Effect
measurement. The optical band gap as determined from FTIR measurements is observed ranging
between 3.12 and 3.2 eV the lowest resistivity was obtained with annealing at 8000c, 92.85 Ω cm
respectively. The results exhibited Superior optoelectronic Characteristics with interesting
temperature-dependent copper delafossite thin films.